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TMPF12N60

TRinno
Part Number TMPF12N60
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF12N60 PDF File

TMPF12N60
TMPF12N60

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax ID = 12A RDS(on) = 0.
65 W(max) @ VGS= 10 V D G S Device TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP12N60(G) TMPF12N60(G) 600 ±30 12 12* 7.
5 7.
5* 48 48* 860 12 23.
1 231 53 1.
85 0.
42 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP12N60(G) 0.
54 62.
5 May 2010 : Rev0 www.
trinnotech.
com TMPF12N60(G) 2.
34 62.
5 Unit ℃/W ℃/W 1/5 TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transcondu...


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