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TMPF12N60G

TRinno
Part Number TMPF12N60G
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF12N60G PDF File

TMPF12N60G
TMPF12N60G

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax ID = 12A RDS(on) = 0.
65 W(max) @ VGS= 10 V D G S Device TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD d...


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