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K2371

NEC
Part Number K2371
Manufacturer NEC
Description 2SK2371
Published Jun 16, 2016
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T...
Datasheet PDF File K2371 PDF File

K2371
K2371

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor www.
DataSheet4U.
com designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-Resistance 2SK2367: RDS(ON) = 0.
25 Ω (VGS = 13 V, ID = 10 A) 2SK2368: RDS(ON) = 0.
27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings 20.
0 ± 0.
2 6.
0 1.
0 15.
7 MAX.
3.
2 ± 0.
2 4 1 23 4.
5 ± 0.
2 7.
0 4.
7 MAX.
1.
5 19 MIN.
3.
0 ± 0.
2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±25 A Drain Current (pulse)* ID(pulse) ±100 A Total Power Dissipation (TC = 25 °C) PT1 160 W Total Power Dissipation (Ta = 25 °C) PT2 3.
0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 ~ +150 °C Single Avalanche Current** IAS 25 A Single Avalanche Energy** EAS 446 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2.
2 ± 0.
2 5.
45 1.
0 ± 0.
2 5.
45 MP-88 0.
6 ± 0.
1 2.
8 ± 0.
1 1.
Gate 2.
Drain 3.
Source 4.
Fin (Drain) Drain Gate Body Diode Source Document No.
TC-2505 (O.
D.
No.
TC-8064 Date Published January 1995 P Printed in Japan © 1995 2SK2371/2SK2372 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN.
Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance www.
DataSheet4RUe.
cvoemrse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall...


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