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2SJ221

Renesas
Part Number 2SJ221
Manufacturer Renesas
Description Silicon P-Channel MOSFET
Published Jun 16, 2016
Detailed Description 2SJ221 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SJ221 PDF File

2SJ221
2SJ221

Overview
2SJ221 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G0851-0200 (Previous: ADE-208-1185) Rev.
2.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SJ221 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value –100 ±20 –20 –80 –20 75 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3.
Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min –100 ±20 — — –1.
0 — — 7.
5 — — — — — — — — — Typ — — — — — 0.
12 0.
16 12 1800 680 145 15 115 320 170 –1.
05 280 Max — — ±10 –250 –2.
0 0.
16 0.
22 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –80 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V Note 3 ID = –10 A, VGS = –4 V Note 3 ID = –10 A, VDS = –10 V Note 3 VDS = –10 V VGS = 0 f = 1 MH...


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