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MPS8050SC

KEC
Part Number MPS8050SC
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Jun 20, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550SC. MAXIMUM RATING (Ta=25 ) CHA...
Datasheet PDF File MPS8050SC PDF File

MPS8050SC
MPS8050SC

Overview
SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION.
FEATURE Complementary to MPS8550SC.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC * Tj 40 25 5 1,200 350 150 Storage Temperature Range Tstg -55 150 * PC : Package Mounted On 99.
5% Alumina (10 8 0.
6 ) UNIT V V V mA mW MPS8050SC EPITAXIAL PLANAR NPN TRANSISTOR A G D E L BL 23 1 M DIM MILLIMETERS A 2.
90+_ 0.
1 B 1.
30+0.
20/-0.
15 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 G 1.
90 J 0.
10 K 0.
00 ~ 0.
10 L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 1.
EMITTER 2.
BASE 3.
COLLECTOR SOT-23(1) C N K J Marking CBKType Name Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Note) : hFE Classification D:150~300 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) fT TEST CONDITION IC=0.
5mA, IE=0 IC=1mA, IB=0 IE=0.
1mA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=1V, IC=100mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=6V, IC=20mA, f=30MHz MIN.
40 25 5 150 150 TYP.
- MAX.
0.
1 0.
1 300 0.
5 1.
2 - UNIT V V V uA uA V V MHz 2015.
9.
30 Revision No : 1 1/2 MPS8050SC 2015.
9.
30 Revision No : 1 2/2 ...


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