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MPS8050

National Semiconductor
Part Number MPS8050
Manufacturer National Semiconductor
Description NPN General Purpose Amplifier
Published Aug 3, 2016
Detailed Description MPS8050 N MPS8050 Discrete POWER & Signal Technologies C BE TO-92 NPN General Purpose Amplifier This device is desi...
Datasheet PDF File MPS8050 PDF File

MPS8050
MPS8050


Overview
MPS8050 N MPS8050 Discrete POWER & Signal Technologies C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA.
Sourced from Process 30.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 25 VCBO Collector-Base Voltage 40 VEBO Emitter-Base Voltage 6.
0 IC Collector Current - Continuous 1.
0 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPS8050 625 5.
0 83.
3 200 Units V V V A °C Units mW mW/°C °C/W °C/W MPS8050 Electrical Characteristics Symbol Parameter NPN General Purpose Amplifier (continued) TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current IC = 30 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 35 V, IE = 0 VCE = 20 V, IE = 0 ON CHARACTERISTICS hFE DC Current Gain VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.
0% IC = 5.
0 mA, VCE = 1.
0 IC = 100 mA, VCE = 1.
0 IC = 800 mA, VCE = 1.
0 IC = 800 mA, IB = 80 mA IC = 800 mA, IB = 80 mA 25 V 40 V 6.
0 V 0.
1 µA 75 nA 45 80 300 40 0.
5 1.
2 V V Typical Charact...



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