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2N5401S

KEC
Part Number 2N5401S
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Vo...
Datasheet PDF File 2N5401S PDF File

2N5401S
2N5401S

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current.
: ICBO=-50nA(Max.
) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.
5V(Max.
) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collector-Emitter Voltage VCEO -150 Emitter-Base Voltage VEBO -5 Collector Current IC -600 Base Current IB -100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.
5% Alumina 10 8 0.
6 ) UNIT V V V mA mA mW 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
EMITTER 2.
BASE 3.
C...


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