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2SA1930

Inchange Semiconductor
Part Number 2SA1930
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Jun 22, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Compl...
Datasheet PDF File 2SA1930 PDF File

2SA1930
2SA1930


Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.
) ·Complementary to 2SC5171 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications isc Product Specification 2SA1930 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 150 ℃ -55~150 ℃ isc website:www.
iscsemi.
cn isc & iscsemi is registered trademark INC...



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