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2SC5172

Part Number	2SC5172
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage : VCEO =400V APPLI...
Datasheet	2SC5172 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage : VCEO =400V APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications isc Product Specification 2SC5172 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 25 W 150 ℃ -55~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturatio...

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