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2SD960

Inchange Semiconductor
Part Number 2SD960
Manufacturer Inchange Semiconductor
Description Silicon NPN Transistor
Published Jun 24, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-...
Datasheet PDF File 2SD960 PDF File

2SD960
2SD960

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
5V(Max) @IC= 3A ·Complement to Type 2SB868 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD960 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD960 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= ...


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