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IRF5801PBF-1

International Rectifier
Part Number IRF5801PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 25, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 2.20 3.9 0.6 V Ω nC A Features Industry-standard pinout...
Datasheet PDF File IRF5801PBF-1 PDF File

IRF5801PBF-1
IRF5801PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 2.
20 3.
9 0.
6 V Ω nC A Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF5801PbF-1 HEXFET® Power MOSFET D1 D2 G3 6D 5D 4S TSOP-6 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF5801TRPbF-1 Package Type TSOP-6 Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRF5801TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient „ Notes  through † are on page 8 Max.
0.
6 0.
48 4.
8 2.
0 0.
016 ± 30 9.
6 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Typ.
––– Max.
62.
5 Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 IRF5801PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 200 ––– ––– 3.
0 ––– ––– ––– ––– ––– 0.
26 ––– ––– ––– ––– ––– ––– ––– ––– 2.
2 5.
5 25 250 100 -100 V V/°C Ω V μA nA VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA ƒ VGS = 10V, ID = 0.
36A ƒ VDS = VGS, ID = 250μA VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Paramete...


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