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IRF5801PbF

International Rectifier
Part Number IRF5801PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 18, 2014
Detailed Description PD-95474B SMPS MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switch...
Datasheet PDF File IRF5801PbF PDF File

IRF5801PbF
IRF5801PbF

Overview
PD-95474B SMPS MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free l IRF5801PbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.
2W ID 0.
6A 9 9 B ! " % $ # 9 9 T TSOP-6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
0.
6 0.
48 4.
8 2.
0 0.
016 ± 30 9.
6 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient „ Typ.
––– Max.
62.
5 Units °C/W Notes  through † are on page 8 www.
irf.
com 1 04/20/10 IRF5801PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
200 ––– ––– 3.
0 ––– ––– ––– ––– Typ.
––– 0.
26 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 2.
2 Ω VGS = 10V, ID = 0.
36A ƒ 5.
5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time In...


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