DatasheetsPDF.com

3DD7C

Part Number	3DD7C
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7C DESCRIPTION ·Collector-Emitter...
Datasheet	3DD7C PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
2V(Max) @IC= 3.
75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range 7.
5 A 75 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS ...

Similar Datasheet

3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100A NPN Transistor - INCHANGE
3DD100B NPN Transistor - INCHANGE
3DD100C NPN Transistor - INCHANGE
3DD100D NPN Transistor - INCHANGE
3DD100E NPN Transistor - INCHANGE
3DD101 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD101A Power Transistor - SJ
3DD101A Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)