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HFS4N65FS

SemiHow
Part Number HFS4N65FS
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 27, 2016
Detailed Description HFS4N65FS July 2015 HFS4N65FS 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4 A FEATURES TO-220F ‰ ...
Datasheet PDF File HFS4N65FS PDF File

HFS4N65FS
HFS4N65FS

Overview
HFS4N65FS July 2015 HFS4N65FS 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4 A FEATURES TO-220F ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.
5 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 3.
0 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested ‰ Single Gauge Package 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 650 4.
0 * 2.
5 * 16 * ρ30 70 4.
0 3.
5 35 0.
28 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ W W/୅ ୅ ୅ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
3.
6 62.
5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡ HFS4N65FS Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 2 A 2.
0 -- Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125୅ VGS = ρ30 V, VDS = 0 V 650 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1...


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