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HFS4N65F

SemiHow
Part Number HFS4N65F
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 27, 2016
Detailed Description HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Techno...
Datasheet PDF File HFS4N65F PDF File

HFS4N65F
HFS4N65F

Overview
HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.
5 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 3.
0 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 4 A TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 650 4.
0 * 2.
5 * 16 * ρ30 70 4.
0 3.
5 35 0.
28 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead tempera...


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