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NT5DS64M8CS

Part Number	NT5DS64M8CS
Manufacturer	Nanya Techology
Description	512Mb DDR SDRAM
Published	Jul 6, 2016
Detailed Description	NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, ...
Datasheet	NT5DS64M8CS PDF File

Overview

NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design rules • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2.
5, 3 • Auto Precharge option for each burst access • Auto Refresh and Self Refresh Modes • 7.
8µs Maximum Average Periodic Refresh Interval • 2.
5V (SSTL_2 compatible) I/O • VDD = VDDQ = 2.
6V ± 0.
1V (DDR400) • VDD = VDDQ = 2.
5V ± 0.
2V (DDR333) • RoHS compliance...

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