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NT5DS64M8DS

Elixir
Part Number NT5DS64M8DS
Manufacturer Elixir
Description 512Mb DDR SDRAM
Published Oct 11, 2014
Detailed Description NT5DS64M8DS N2DS51216DS 512Mb DDR SDRAM Preliminary Feature CAS Latency Frequency DDR-333 DDR400  2KB page size for...
Datasheet PDF File NT5DS64M8DS PDF File

NT5DS64M8DS
NT5DS64M8DS


Overview
NT5DS64M8DS N2DS51216DS 512Mb DDR SDRAM Preliminary Feature CAS Latency Frequency DDR-333 DDR400  2KB page size for all configurations.
Units Speed Sorts -6K CL-tRCD-tRP -5T  DQS is edge-aligned with data for reads and is center-aligned with data for WRITEs 2.
5-3-3 266 333 333 3-3-3 266 333 400 tCK CL=2 Speed CL=2.
5 CL=3  Differential clock inputs (CK and ) Mbps  Data mask (DM) for write data  DLL aligns DQ and DQS transition with CK transitions.
 Commands entered on each positive CK edge; data  Power Supply Voltage: VDD=VDDQ=2.
5V±0.
2V (DDR-333) VDD=VDDQ=2.
6V±0.
1V (DDR-400/500) and data mask referenced to both edges of DQS  Burst Lengths: 2, 4 or 8  Auto Pre-charge option for each burst access  Auto-Refresh and Self-Refresh Mode  7.
8 µs max.
Average Periodic Refresh Interval  2.
5V (SSTL_2 compatible) I/O  RoHS and Halogen-Free compliance  Packages: 66 pin TSOPII     4 internal memory banks for concurrent operation.
CAS Latency: 2, 2.
5 and 3 Double Data Rate Architecture Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
 Commercial grade device support 0℃~70℃ Operating Temperature (-6K/5T) 1 REV 0.
1 11/2012 NT5DS64M8DS N2DS51216DS 512Mb DDR SDRAM Preliminary Description Elixir 512Mb SDRAMs is a high-speed CMOS Double Data Rate SDRAM containing 536,870,912 bits.
It is internally configured as a qual-bank DRAM.
The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device.
These synchronous devices achieve high speed double-data-rate transfer rates of up to 500 (400, 333 or 266) MHz for general applications.
The 512Mb DDR SDRAM uses a double-data-rate architecture to achieve high speed operation.
The double data rate architecture is essentially a 2η prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single read or write access for the 512Mb DDR SDRAM effectively consists o...



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