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AUIRFN7107

Infineon
Part Number AUIRFN7107
Manufacturer Infineon
Description Power MOSFET
Published Jul 10, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRFN7107 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating T...
Datasheet PDF File AUIRFN7107 PDF File

AUIRFN7107
AUIRFN7107


Overview
  AUTOMOTIVE GRADE AUIRFN7107 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * HEXFET® POWER MOSFET VDSS RDS(on) max (@VGS = 10V) QG (typical) 75V 8.
5m 51nC Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Applications  Injection  Heavy Loads  DC-DC Converter ID (@TC (Bottom) = 25°C)   75A G Gate PQFN 5X6 mm D Drain S Source Base Part Number AUIRFN7107 Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Complete Part Number AUIRFN7107TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C VGS EAS IAR TJ TSTG Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Di...


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