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AUIRFN7107TR

International Rectifier
Part Number AUIRFN7107TR
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 5, 2021
Detailed Description AUTOMOTIVE GRADE AUIRFN7107 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temp...
Datasheet PDF File AUIRFN7107TR PDF File

AUIRFN7107TR
AUIRFN7107TR

Overview
AUTOMOTIVE GRADE AUIRFN7107 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Applications  Injection  Heavy Loads  DC-DC Converter HEXFET® POWER MOSFET VDSS RDS(on) max (@VGS = 10V) QG (typical) ID (@TC (Bottom) = 25°C) 75V 8.
5m 51nC 75A G Gate D Drain PQFN 5X6 mm S Source Base Part Number Package Type Standard Pack Form Quantity Complete Part Number AUIRFN7107 PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN7107TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C VGS EAS IAR TJ TSTG Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipat...


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