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NP75N04YUG

Renesas
Part Number NP75N04YUG
Manufacturer Renesas
Description N-Channel MOSFET
Published Jul 11, 2016
Detailed Description NP75N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 Description The NP...
Datasheet PDF File NP75N04YUG PDF File

NP75N04YUG
NP75N04YUG

Overview
NP75N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0018EJ0100 Rev.
1.
00 Jul 01, 2010 Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Low on-state resistance ⎯ RDS(on) = 4.
8 mΩ MAX.
(VGS = 10 V, ID = 37.
5 A) • Low Ciss: Ciss = 4300 pF TYP.
(VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No.
NP75N04YUG -E1-AY ∗1 NP75N04YUG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Package 8-pin HSON, Taping (E1 type) 8-pin HSON, Taping (E2 type) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 Channel Temperature Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±75 ±225 138 1.
0 175 −55 to +175 35 123 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 1.
09 150 °C/W °C/W Notes: ∗1.
TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2.
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.
8 mmt *3.
Tch(peak) ≤ 150°C, RG = 25 Ω R07DS0018EJ0100 Rev.
1.
00 Jul 01, 2010 Page 1 of 6 NP75N04YUG Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse...


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