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NP75N04YUK

Renesas
Part Number NP75N04YUK
Manufacturer Renesas
Description N-Channel MOSFET
Published Jul 11, 2016
Detailed Description NP75N04YUK 40 V – 75 A – N-channel Power MOS FET Application: Automotive Preliminary Data Sheet R07DS1004EJ0200 Rev.2.0...
Datasheet PDF File NP75N04YUK PDF File

NP75N04YUK
NP75N04YUK

Overview
NP75N04YUK 40 V – 75 A – N-channel Power MOS FET Application: Automotive Preliminary Data Sheet R07DS1004EJ0200 Rev.
2.
00 May 24, 2018 Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 3.
3 m MAX.
(VGS = 10 V, ID = 38 A)  Non logic level drive type  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
Lead Plating Packing NP75N04YUK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) NP75N04YUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 4 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Repetitive Avalanche Current *3, 4 Repetitive Avalanche Energy *3, 4 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 20 75 300 138 1.
0 175 –55 to +175 35 123 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*4 Rth(ch-A) *4 1.
09 150 °C/W °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 Mounted on glass epoxy substrate of 40 mm  40 mm  1.
6 mmt with 4% Copper area (35 m) *3 RG = 25 , VGS = 20 V  0 V *4.
Not subject of production test.
Verified by design/characterization.
R07DS1004EJ0200 Rev.
2.
00 May 24, 2018 Page 1 of 4 NP75N04YUK Preliminary Electrical Characteristics (TA = 25°C) Item Symbol MIN.
TYP.
MAX.
Zero Gate Voltage Drain Current IDSS — — 1 Gate Leakage Current IGSS — — 100 Gate to Source Threshold Voltage VGS(th) 2.
0 3.
0 4.
0 Forward Transfer Admittance *1 | yfs | 31 62 — Drain to Source On-state Resistance *1 RDS(on) — 2.
6 3.
3 Input Cap...


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