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RB751S-40

JCET
Part Number RB751S-40
Manufacturer JCET
Description Schottky barrier Diode
Published Jul 12, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB751S-40 Schottky barrier Diode ...
Datasheet PDF File RB751S-40 PDF File

RB751S-40
RB751S-40

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-523 Plastic-Encapsulate Diodes RB751S-40 Schottky barrier Diode FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability SOD-523 MARKING: 5 2 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Peak reverse voltage VRM DC reverse voltage VR Mean rectifying current IO Non-repetitive Peak Forward Surge Current@t=8.
3ms Power dissipation IFSM PD Thermal Resistance Junction to Ambient RθJA Junction temperature Tj Storage temperature Tstg Limit 40 30 30 200 150 667 125 -55~+150 Unit V V mA mA mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min Typ Max Unit 0.
37 V 0.
5 μA 2 pF Conditions IF=1mA VR=30V VR=1V,f=1MHZ www.
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com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 100 10 T a =100 oC oC =25 T a FORWARD CURRENT I (mA) F 1 0.
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01 0.
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2 0.
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6 0.
8 FORWARD VOLTAGE V (V) F 1.
0 REVERSE CURRENT I (uA) R Reverse Characteristics 10 T =100 oC a 1 0.
1 T =25 oC a 0.
01 1E-3 0 5 10 15 20 25 30 35 REVERSE VOLTAGE V (V) R CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 10 9 T =25℃ a 8 f=1MHz 7 6 5 4 3 2 1 0 5 10 15 20 REVERSE VOLTAGE V (V) R Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 AMBIENT TEMPERATURE T (℃) a www.
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com 2 D,Mar,2015 SOD-523 Package Outline Dimensions 6\PERO A A1 b c D E E1 E2 L ș SOD-523 Suggested Pad Layout 'LPHQVLRQV ,Q 0LOOLPHWHUV 0LQ 0D[ 0.
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