DatasheetsPDF.com

RB751S-40

Rohm
Part Number RB751S-40
Manufacturer Rohm
Description Schottky barrier diode
Published Apr 16, 2005
Detailed Description Data Sheet Schottky barrier diode RB751S-40 Applications Low current rectification Dimensions (Unit : mm) 0.8±0.05...
Datasheet PDF File RB751S-40 PDF File

RB751S-40
RB751S-40

Overview
Data Sheet Schottky barrier diode RB751S-40 Applications Low current rectification Dimensions (Unit : mm) 0.
8±0.
05 0.
12±0.
05 Land size figure (Unit : mm) 0.
8 1.
2±0.
05 1.
6±0.
1 0.
6 1.
7 Features 1) Ultra small mold type.
(EMD2) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 0.
3±0.
05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 4.
0±0.
1 2.
0±0.
05 0.
6±0.
1 φ1.
5±0.
05 φ1.
55±0.
05 EMD2 Structure 0.
2±0.
05 1.
75±0.
1 0.
6 3.
5±0.
05 8.
0±0.
15 11.
.
2256±0.
0.
0065 00 2.
2.
4405±±0.
0.
015 11.
.
235±0.
0066 0 00.
9.
905±±0.
005.
06 0 Emポptケy pッoトcket 4.
0±0.
1 2.
0±0.
05 φ0.
5 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average retified forward current VRM VR Io Forward currnt surge peak(60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 125 -40 to +125 Unit V V mA mA °C °C 0.
2 00.
7.
756±±0.
005.
05 Electrical characteristics(Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Forward voltage VF - - 0.
37 Reverse current IR - - 0.
5 Capacitance between terminals Ct - 2 - Unit Conditions V IF=1mA μA VR=30V pF VR=1V , f=1MHz www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/3 2011.
03 - Rev.
C RB751S-40 FORWARD CURRENT:IF(mA) Electrical characteristic curves 100 Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ 0.
1 Ta=25℃ FORWARD VOLTAGE:VF(mV) 0.
01 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS VF 300 Ta=25℃ 290 IF=1mA n=30pcs 280 270 260 AVE:267.
4mV 250 VF DIPERSION MAP REVERSE CURRENT:IR(uA) REVERSE CURRENT:IR(nA) 1000 100 10 1 0.
1 0.
01 0.
001 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 1000 900 800 700 600 500 400 300 200 100 0 Ta=25℃ VR=30V n=30pcs AVE:185.
5nA IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Data Sheet 10 f=1MHz 1 0.
1 0 10 20 30 REVERSE VOLT...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)