DatasheetsPDF.com

6N70

Inchange Semiconductor
Part Number 6N70
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 13, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·FEATURES ·Drain Current ID= 6A@...
Datasheet PDF File 6N70 PDF File

6N70
6N70

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
9Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 700 V Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous 6A Drain Current-Single Plused 24 A Total Dissipation @TC=25℃ 150 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.
83 ℃/W 40 ℃/W isc website：www.
iscsemi.
cn 1 PDF pdfFactory Pro www.
fineprint.
cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 6A ;VGS= 0 VGS= 10V; ID= 3.
0A VGS= ±30V;VDS= 0 VDS=700V; VGS= 0 MIN TYPE MAX UNIT 700 V 2.
0 4.
0 V 1.
4 V 1.
9 Ω ±100 nA 250 µA isc website：www.
iscsemi.
cn 2 PDF pdfFactory Pro www.
fineprint.
cn ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)