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8N18

Inchange Semiconductor
Part Number 8N18
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 13, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N18 ·DESCRIPTION ·Drain Current ID= ...
Datasheet PDF File 8N18 PDF File

8N18
8N18

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N18 ·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 180 ±20 8 V V A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
67 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 8N18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS; ID=1mA IS=4A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=4A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 145V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time VGS=10V; ID=4A; VDD=100V; RL=50Ω MIN TYPE MAX UNIT 180 V 2.
0 4.
0 V 1.
4 V 0.
5 Ω ±100 nA 1 µA 750 100 pF 250 150 40 ns 105 135 isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...


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