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FTD2058

Part Number	FTD2058
Manufacturer	First Silicon
Description	NPN Transistor
Published	Jul 13, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA FTD2058 FTD2058 TRANSISTOR (NPN) FEATURES Low VCE(sat): VCE(sat)=1.0V(Max.) (IC/IB=2A/0....
Datasheet	FTD2058 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA FTD2058 FTD2058 TRANSISTOR (NPN) FEATURES Low VCE(sat): VCE(sat)=1.
0V(Max.
) (IC/IB=2A/0.
2A) Complementary to FTB1366 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 3 A PC Collector power dissipation 2W TJ Junction temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-220F 1.
BASE 2.
COLLECTOR 3.
EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltage Collector-emitter breakdown voltage E...

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