R TRIACS
3FT1T1
MAIN CHARACTERISTICS Package
IT(RMS) VDRM IGT
0. 8A 600V/800V
5mA
APPLICATIONS
Pin
1 2 3
Description
1 MT1
G
2 MT2
z z
z AC switching z Phase control
TO-92
FEATURES
z , z Glass-passivated mesa
chip for reliability and
uniform
z
z RoHS
z Low on-state voltage and High ITSM
z RoHS products
ORDER MESSAGES
Order code
Marking
3FT1T1-O-T-N-C
3FT1T1
Package
TO-92
Packaging Bag
ABSOLUTE RATINGS (TC=25℃)
Parameter
Symbol
Condition
Repetitive peak off-state voltage
VDRM
On-state RMS current IT(RMS) full sine wave
Non-
full sine wave ,t=20ms
repetitive surge peak on-state current ITSM full sine wave ,t=16. 7ms
I2t t=10ms Repetitive rate of rise of on-state current after triggering dI/dt
Peak gate current
Average gate power
Storage temperature
Operation junction temperature
IGM PG(AV) Tstg
TVJ
over any 20ms period
Value Unit
±600 ±800
V
0. 8 A
9A
9. 5 A
0. 45 A2s
20 A/μs
1A 0. 1 W -40~150 ℃ 125 ℃
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R 3FT1T1
ELECTRICAL CHARACTERISTIC (TC=25℃)
Parameter
Symbol
Condition
Peak Repetitive Blocking Current
IDRM
VDM=VDRM, Tj=125℃, gate open
Peak on-state voltage VTM ITM=2A
Min Typ Max Unit
- - 0. 1 mA
- 1. 6 1. 75 V
Gate trigger current
MT1(-),MT2(+),G(+)
IGT
VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-)
MT1(+),MT2(-),G(+)
5 12
mA mA mA mA
MT1(-),MT2(+),G(+) -
- 1. 5 V
Gate trigger voltage
Holding current
VGT
VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-)
MT1(+),MT2(-),G(+)
IH VDM=12V, IGT=0. 1A
-
- 1. 5 V - 1. 5 V - 1. 8 V
15 mA
Rise of off- state voltage
dV/dt VDM=67% VDRM(MAX), Tj=125℃, gate open
10 -
- V/μs
THERMAL CHARACTERISTIC
Parameter
Thermal resistance junction to lead
Symbol
Condition
Rth(j-l) full cycle
Min Typ Max Unit
- - 75 ℃/W
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R
ELECTRICAL CHARACTERISTICS (curves)
TC- IT(RMS)
3FT1T1
Ptot (W)
IT(RMS) (A)
IT – VTM
IT (A)
VTM (V)
:201510B
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