R TRIACS
3FT1T3
MAIN CHARACTERISTICS
IT(RMS) VDRM IGT
1. 0A 600V/800V
5mA
APPLICATIONS
z z
z AC switching z Phase control
FEATURES
z ,
z
z RoHS
z Glass-passivated mesa chip for reliability and uniform
z Low on-state voltage and High ITSM
z RoHS products
Package
Pin
1 2 3
Description
1 MT1
G
2 MT2
TO-92
ORDER MESSAGES
Order code
Marking
3FT1T3-O-T-N-C
3FT1T3
3FT1T3-O-T-B-A
3FT1T3
Package
TO-92 TO-92
Packaging Bag Tape
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R 3FT1T3
ABSOLUTE RATINGS (TC=25℃)
Parameter
Symbol
Condition
Repetitive peak off-state voltage
VDRM
On-state RMS current IT(RMS) full sine wave
Non-
full sine wave ,t=20ms
repetitive surge peak on-state current ITSM full sine wave ,t=16. 7ms
I2t t=10ms
Value Unit
±600 ±800
V
1. 0 A
16 A
17. 6 1. 28
A A2s
Repetitive rate of rise of on-state current after triggering
Peak gate current
Average gate power
Storage temperature
Operation junction temperature
dI/dt
IGM PG(AV) Tstg
TVJ
MT1(-),MT2(+),G(+); MT1(-),MT2(+),G(-);
MT1(+),MT2(-),G(-)
50 A/μs
2A 0. 1 W -40~150 ℃ -40~125 ℃
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R 3FT1T3
ELECTRICAL CHARACTERISTIC (TC=25℃)
Parameter
Symbol
Condition
Peak Repetitive Blocking Current
IDRM
VDM=VDRM, Tj=125℃, gate open
Peak on-state voltage VTM ITM=5A
Min Typ Max Unit
- - 0. 5 mA
- 1. 4 1. 7 V
MT1(-),MT2(+),G(+)
5 mA
Gate trigger current
IGT
VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-)
5 mA 5 mA
Gate trigger voltage Holding current Latching current
MT1(+),MT2(-),G(+) VGT VDM=12V,RL=100Ω
-
45 mA 0. 7 1. 5 V
IH VDM=12V, IGT=0. 1A
10 mA
IL VDM=12V, IGT=0. 1A
15 mA
Rise of off- state voltage
dV/dt VDM=67% VDRM(MAX), Tj=125℃, gate open
10
V/μs
THERMAL CHARACTERISTIC
Parameter
Thermal resistance junction to lead
Symbol
Condition
Rth(j-l) full cycle(TO-92)
Min Typ Max Unit
- - 60 ℃/W
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R
ELECTRICAL CHARACTERISTICS (curves)
Ptot- IT(RMS)
3FT1T3
Ptot(W)
IT(RMS)...