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KSH13003A

SemiHow
Part Number KSH13003A
Manufacturer SemiHow
Description NPN Silicon Power Transistor
Published Jul 18, 2016
Detailed Description KSX13003A Series KSB13003A / KSG13003A KSC13003A / KSH13003A NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= ...
Datasheet PDF File KSH13003A PDF File

KSH13003A
KSH13003A

Overview
KSX13003A Series KSB13003A / KSG13003A KSC13003A / KSH13003A NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.
5A General Description • High Speed Switching • Suitable for Electronic Ballast up to 21W Features • VCBO = 700V • VCEO = 400V • VBEO = 9V • IC = 1.
5A TO-92 TO-92L TO-126 TO-220 3 2 1 3 2 1 3 2 1 3 2 1 Ordering Information Ordering number KSB13003A KSB13003AR KSG13003AR KSC13003A KSH13003A Package TO-92 TO-92 TO-92L TO-126 TO-220 Pin Assignment 123 BCE ECB ECB BCE BCE Packing Ammo Ammo Ammo Bulk Tube hFE Classification Classification hFE * Test Condition : VCE=2V,IC=0.
5A O 10 ~ 25 Y 20 ~ 35 క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13003A Series KSB13003A / KSG13003A KSC13003A / KSH13003A NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.
5A Absolute Maximum Ratings TC=25୅ unless otherwise noted CHARACTERISTICS SYMBOL TO-92 RATING TO-92L TO-126 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25୅) Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC TJ TSTG 1.
1 700 400 9 1.
5 3 0.
75 1.
5 20 150 -65~150 TO-220 30 UNIT V V V A A A W ୅ ୅ Electrical Characteristics TC=25୅ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Base Breakdown Voltage VCBO IC=500ȝA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=2V,IC=0.
5A VCE=2V,IC=1A *Collector-Emitter Saturation Voltage VCE(sat) IC=0.
5A,IB=0.
1A IC=1A,IB=0.
25A IC=1.
5A,IB=0.
5A *Base-Emitter Saturation Voltage VBE(sat) IC=0.
5A,IB=0.
1A IC=1A,IB=0.
25A Output Capacitance Cob VCB=10V, f=0.
1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.
1A Turn on Time Storage Time Fall Time ton Vcc=125V, Ic=1A tstg IB1=0.
2A, IB2= -0.
2A tF RL=125ȍ * Pulse Test: Pulse Width”ȝV'XW\&\FOH” Min Typ.
Max Unit 700 V 400 V 10 ᒺ 10 35 5 0.
5 ...


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