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KSH13003

SHANTOU HUASHAN
Part Number KSH13003
Manufacturer SHANTOU HUASHAN
Description NPN SILICON TRANSISTOR
Published Jan 14, 2011
Detailed Description NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13003 ¨€ HIGH VOLTAGE SWITCH MOD...
Datasheet PDF File KSH13003 PDF File

KSH13003
KSH13003

Overview
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.
,Ltd.
KSH13003 ¨€ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching.
Suitable for Switching Regulator and Montor Control ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-65~150¡æ T j ¡ ª ¡ ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ P C ¡ ª ¡ ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡40W VCBO ¡ ª ¡ ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡700V VCEO ¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡400V VE B O ¡ ª ¡ ªEmitter - Base Voltage¡-¡-¡-¡-¡¡-¡-¡-¡-¡-¡-¡9V 1¨D Base£¬ B 2¨D Collector£¬ C 3¨D Emitter£¬ E I¡ª¡ª 1.
5A C Collector Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡IB¡ª¡ª Base Curren¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡0.
75A ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Cut-off Current Min 400 10 Typ Max Unit V Test Conditions BVCEO IEBO HFE1 HFE2 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 fT tON tSTG tF ¨€ IC=5mA, IB=0 VCE=5V, IC=0.
5A VCE=2V, IC=1A ¦Ì A VEB=9V, IC=0 DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Collector- Emitter Saturation Voltage Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 10 5 40 0.
5 V IC=0.
5A, IB =0.
1A IC=1A, IB =0.
25A IC=1.
5A, IB =0.
5A IC=0.
5A, IB=0.
1A IC=1A, IB=0.
25A 1 3 1 1.
2 V V V V 4 1.
1 4.
0 0.
7 MHz VCE =10V,IC=0.
1A VCC=125V, IC=1A, ¦Ì s ¦Ì s ¦Ì s IB1 =0.
2A,IB2 =-0.
2A RL=125¦¸ hFE Classification H1 10-16 H2 14-21 H3 19-26 H4 24-31 H5 29-40 www.
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