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DMN10H170SFDE

Diodes
Part Number DMN10H170SFDE
Manufacturer Diodes
Description N-Channel MOSFET
Published Jul 22, 2016
Detailed Description ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V...
Datasheet PDF File DMN10H170SFDE PDF File

DMN10H170SFDE
DMN10H170SFDE

Overview
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.
5V ID max TA = +25°C 2.
9A 2.
6A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  0.
6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3) Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-...


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