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DMN10H170SFG

Diodes
Part Number DMN10H170SFG
Manufacturer Diodes
Description N-Channel MOSFET
Published Jul 22, 2016
Detailed Description NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2....
Datasheet PDF File DMN10H170SFG PDF File

DMN10H170SFG
DMN10H170SFG

Overview
NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.
5V ID max TA = +25°C 2.
9A 2.
7A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications  Backlighting  Power Management Functions  DC-DC Converters POWERDI3333 DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features  100% Unclamped Inductive Switch (UIS) test in production  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: POWERDI3333  Case Material: Molded Plastic, "...


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