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AUIRGPS4067D1

International Rectifier
Part Number AUIRGPS4067D1
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 23, 2016
Detailed Description AUTOMOTIVE GRADE PD - 97726C AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Featur...
Datasheet PDF File AUIRGPS4067D1 PDF File

AUIRGPS4067D1
AUIRGPS4067D1

Overview
AUTOMOTIVE GRADE PD - 97726C AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  6μs SCSOA  Square RBSOA  100% of the parts tested for ILM   Positive VCE (on) Temperature Coefficient  Soft Recovery Co-pak Diode  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V IC = 160A, TC = 100°C tSC 6μs, TJ(max) = 175°C VCE(on) typ.
= 1.
70V C Benefits  High Efficiency in a Wide Range of Applications  Suitable for Applications in the Low to Mid-Rrange Frequencies  Rugged Transient Performance for Increased Reliability  Excellent Current Sharing in Parallel Operation  Low EMI E GC Super-247 AUIRGPS4067D1 GC E Absolute Maximum Ratings Gate Collector Emitter Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
Units VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF NOMINAL IFM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V dDiode Nominal Current dDiode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TST G Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA Parameter fTh...


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