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AUIRGPS4067D1

Infineon
Part Number AUIRGPS4067D1
Manufacturer Infineon
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 11, 2020
Detailed Description AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VC...
Datasheet PDF File AUIRGPS4067D1 PDF File

AUIRGPS4067D1
AUIRGPS4067D1

Overview
AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  6µs SCSOA  Square RBSOA  100% of the parts tested for ILM   Positive VCE (on) Temperature Coefficient  Soft Recovery Co-pak Diode  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ.
= 1.
70V C Benefits  High Efficiency in a Wide Range of Applications  Suitable for Applications in the Low to Mid-Range Frequencies  Rugged Transient Performance for Increased Reliability  Excellent Current Sharing in Parallel Operation  Low EMI G Gate GCE PG-TO274-3-903 C Collector E Emitter Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number AUIRGPS4067D1 PG-TO274-3-903 Tube 25 AUIRGPS4067D1 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF NOMINAL IFM VGE Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Nominal Current  Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Max.
600 240 160 120 360 480 120 480 ±20 ±30 Units V A V PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Maximum Power Dis...


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