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2SC2653H

Inchange Semiconductor
Part Number 2SC2653H
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jul 29, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor Product Specification 2SC2653H DESCRIPTION ·High VCEO ·Large P...
Datasheet PDF File 2SC2653H PDF File

2SC2653H
2SC2653H

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor Product Specification 2SC2653H DESCRIPTION ·High VCEO ·Large Pc APPLICATIONS ·Color TV Horizontal ·Deflection Driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 480 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous Total Power Dissipation Pc @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.
2 A 15 W 150 ℃ -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor Product Specification 2SC2653H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Sustaining Voltage IC=5mA ; IB= 0; Ta=100℃ VCBO Collector-Base Sustaining Voltage IC=0.
1mA ; IE= 0; Ta=100℃ VEBO Emitter-Base Breakdown Voltage IE= 0.
1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=50mA; IB= 5mA ICBO Collector Cutoff Current VCB=200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 10mA ; VCE=10V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0 ; VCB=50V;f= 1.
0MHz IE=-10mA ; VCE=30V MIN TYP.
MAX UNIT 300 V 480 V 7.
5 V 1V 2 μA 2 μA 40 250 4.
5 pF 50 MHz isc Website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark ...


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