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2SC2654

Renesas
Part Number 2SC2654
Manufacturer Renesas
Description NPN Transistor
Published Aug 22, 2017
Detailed Description DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-...
Datasheet PDF File 2SC2654 PDF File

2SC2654
2SC2654

Overview
DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.
3 V MAX.
(IC = 3.
0 A) • Ideal for use in a lamp driver • Complementary transistor: 2SA1129 PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Base current (DC) Total power dissipation Total power dissipation IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Junction temperature Tj Storage temperature Tstg * PW ≤ 300 µs, duty cycle ≤ 10% Ratings 100 40 7.
0 7.
0 15 3.
5 40 1.
5 150 −55 to +150 Unit V V V A A A W W °C °C Electrode Connection ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector...


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