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IRF330

Inchange Semiconductor
Part Number IRF330
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 2, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 DESCRIPTION ·Drain Current ID=...
Datasheet PDF File IRF330 PDF File

IRF330
IRF330

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 DESCRIPTION ·Drain Current ID=5.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
0Ω(Max) ·Fast Switching Speed APPLICATIONS ·High voltage,high speed applications ·Off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 5.
5 A Total Dissipation@TC=25℃ 75 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
67 ℃/W isc website：www.
iscsemi.
cn 1 PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.
25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.
25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 VSD Diode Forward Voltage IF= 5.
5A; VGS= 0 MIN MAX UNIT 400 V 24V 1.
0 Ω ±100 nA 250 uA 1.
6 V isc website：www.
iscsemi.
cn 2 PDF pdfFactory Pro www.
fineprint.
cn ...


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