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IRFS624B

Fairchild
Part Number IRFS624B
Manufacturer Fairchild
Description 250V N-Channel MOSFET
Published Aug 16, 2005
Detailed Description IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRFS624B PDF File

IRFS624B
IRFS624B

Overview
IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • • 4.
1A, 250V, RDS(on) = 1.
1Ω @VGS = 10 V Low gate charge ( typical 13.
5 nC) Low Crss ( typical 9.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF624B 250 4.
1 2.
6 16.
4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS624B 4.
1 * 2.
6 * 16.
4 * 75 4.
1 4.
9 5.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 49 0.
39 -55 to +150 300 34 0.
27 * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF624B 2.
54 0.
5 62.
5 IRFS624B 3.
7 -62.
5 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev.
A, November 2001 IRF624B/IRFS624B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Ma...


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