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IRFW730S

Fairchild Semiconductor
Part Number IRFW730S
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 3, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 IRFW730S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Cap...
Datasheet PDF File IRFW730S PDF File

IRFW730S
IRFW730S

Overview
$GYDQFHG 3RZHU 026)(7 IRFW730S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 400V ♦ Lower RDS(ON): 0.
765Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 400 V RDS(on) = 1.
0Ω ID = 5.
5 A D2-PAK I2-PAK 2 1 3 1 2 3 1.
Gate 2.
Drain 3.
Source Value 400 5.
5 3.
5 22 ±30 346 5.
5 7.
3 4.
0 3.
1 73 0.
58 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W W/°C °C Thermal Resistance Symbol Characteristic Typ.
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient * Junction-to-Ambient ---- * When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.
71 40 62.
5 Units °C/W Rev.
B ©1999 Fairchild Semiconductor Corporation IRFW730S 1&+$11(/ 32:(5 026)(7 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min.
Typ.
Max.
Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Char...


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