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IRFW730B

Fairchild Semiconductor
Part Number IRFW730B
Manufacturer Fairchild Semiconductor
Description 400V N-Channel MOSFET
Published Nov 24, 2014
Detailed Description IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General Description These N-Channel enhan...
Datasheet PDF File IRFW730B PDF File

IRFW730B
IRFW730B

Overview
IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features • 5.
5A, 400V, RDS(on) = 1.
0Ω @VGS = 10 V • Low gate charge ( typical 25 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds G! D ! ● ◀▲ ● ● ! S IRFW730B / IRFI730B 400 5.
5 3.
5 22 ± 30 330 5.
5 7.
3 5.
5 3.
13 73 0.
58 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient * RθJA Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ Max Units -- 1.
71 °C/W -- 40 °C/W -- 62.
5 °C/W ©2001 Fairchild Semiconductor Corporation Rev.
B, November 2001 IRFW730B / IRFI730B Electrical Characteristics Symbol Paramete...


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