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IRF820

Inchange Semiconductor
Part Number IRF820
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 4, 2016
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF820 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Sour...
Datasheet PDF File IRF820 PDF File

IRF820
IRF820

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF820 DESCRIPTION ·Drain Current –ID= 2.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current,high speed switching · Swith mode power supplies(smps) ·DC-AC converters for welding equipmentand uninterruptible power supplies and motor driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2.
5 A PD Power Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc w...


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