DatasheetsPDF.com

TIC106N

Inchange Semiconductor
Part Number TIC106N
Manufacturer Inchange Semiconductor
Description Thyristors
Published Aug 15, 2016
Detailed Description isc Thyristors TIC106N APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of ...
Datasheet PDF File TIC106N PDF File

TIC106N
TIC106N


Overview
isc Thyristors TIC106N APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 800 800 3.
2 5...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)