DatasheetsPDF.com

TIC106

Part Number	TIC106
Manufacturer	Power Innovations Limited
Description	SILICON CONTROLLED RECTIFIERS
Published	Apr 16, 2005
Detailed Description	TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1...
Datasheet	TIC106 PDF File

Overview

TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q q 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.
MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC106D Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width ≤ 300 µs) Peak gate power dissipation (pulse width ≤ 300 µs) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.
6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 5 3.
2 30 0.
2 1.
3 0.
3 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V V UNIT NOTES: 1.
These values apply when the gate-cathode resistance RGK = 1 kΩ.
2.
These values apply for continuous dc operation with resistive load.
Above 80°C derate linearly to zero at 110°C.
3.
This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load.
Above 80°C derate linearly to zero at 110°C.
4.
This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium.
5.
This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION Information is current as of publication date.
Products conform to specifications in ac...

Similar Datasheet

TIC106 SILICON CONTROLLED RECTIFIERS - Power Innovations Limited
TIC106A P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR - Comset Semiconductors
TIC106B P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR - Comset Semiconductors
TIC106C P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR - Comset Semiconductors
TIC106C Thyristor - INCHANGE
TIC106D Thyristors - Inchange Semiconductor
TIC106D P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR - Comset Semiconductors
TIC106D SILICON CONTROLLED RECTIFIER - BOURNS
TIC106D 5A SCR - Qidong Jilai
TIC106E P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR - Comset Semiconductors

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)