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TIC106E

Comset Semiconductors
Part Number TIC106E
Manufacturer Comset Semiconductors
Description P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
Published Dec 12, 2012
Detailed Description SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING ...
Datasheet PDF File TIC106E PDF File

TIC106E
TIC106E

Overview
SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.
DataSheet4U.
net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.
6 mm from case for 10 seconds B C D E M S N Unit V V A A A A W W...


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