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CEB6031LS2

Chino-Excel Technology
Part Number CEB6031LS2
Manufacturer Chino-Excel Technology
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEP6031LS2/CEB6031LS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , R...
Datasheet PDF File CEB6031LS2 PDF File

CEB6031LS2
CEB6031LS2

Overview
CEP6031LS2/CEB6031LS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=12m Ω @VGS=10V.
RDS(ON)=17mΩ @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D G G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 15 Operating and StorageTemperature Range TJ, TSTG Limit 30 Ć 20 60 180 60 50 0.
4 -65 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 2.
5 62.
5 C /W C /W 15-2 CEP6031LS2/CEB6031LS2 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) ...


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