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CEB6031L

Chino-Excel Technology
Part Number CEB6031L
Manufacturer Chino-Excel Technology
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES 30V , 60A , RDS...
Datasheet PDF File CEB6031L PDF File

CEB6031L
CEB6031L

Overview
CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES 30V , 60A , RDS(ON)=10m Ω @VGS=10V.
RDS(ON)=15m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Ć16 60 180 60 75 0.
5 -65 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 4-77 2 62.
5 C/W C/W CEP6031L/CEB6031L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter Symbol Condition M...


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