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NTE2405

NTE
Part Number NTE2405
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 16, 2016
Detailed Description NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (N...
Datasheet PDF File NTE2405 PDF File

NTE2405
NTE2405

Overview
NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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30V Collector–Base Voltage, VCBO .
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40V Emitter–Base Voltage, VEBO .
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10V Collector Current, IC Continuous .
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300mA Peak .
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800mA Base Current, IB .
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100mA Total Power Dissipation (TA = +25°C, Note 1), PD .
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350mW Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resistance, Junction to Ambient (Note 1), RthJA .
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350K/W Note 1.
Mounted on a ceramic substrate of .
590 (15mm) x .
590 (15mm) x .
027 (0.
7mm).
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector–Base Current Emitter–Base Current Collector–Emitter Breakdown Voltage Collector–Base Breakdown V...


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