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NTE2407

NTE
Part Number NTE2407
Manufacturer NTE
Description Silicon PNP Transistor
Published May 9, 2005
Detailed Description NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) Absolute Maximum Ratings: (TA = +25...
Datasheet PDF File NTE2407 PDF File

NTE2407
NTE2407

Overview
NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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60V Collector–Emitter Voltage, VCEO .
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60V Emitter–Base Voltage, VEBO .
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5V Continuous Collector Current, IC .
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600mA Total Device Dissipation (FR–5 Board, Note 1), PD .
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225mW Derate above +25°C .
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1.
8mW/°C Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA .
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556°C/W Total Device Dissipation (Alumina Substrate, Note 2), PD .
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300mW Derate above +25°C .
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2.
4mW/°C Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA .
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417°C/W Operating Junction Temperature Range, TJ .
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–55 ° to +150°C Storage Temperature Range, Tstg .
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–55 ° to +150°C Note 1.
FR–5 = 1.
000 (25.
4mm) x .
750 (19.
05mm) x .
062 (1.
57mm).
Note 2.
Alumina = .
400 (10.
2mm) x .
300 (7.
62mm) x .
024 (.
609mm), 99.
5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitt...


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