DatasheetsPDF.com

CEDF630

Chino-Excel Technology
Part Number CEDF630
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 23, 2005
Detailed Description CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Sup...
Datasheet PDF File CEDF630 PDF File

CEDF630
CEDF630

Overview
CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.
8A, RDS(ON) = 360mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 7.
8 31.
2 50 0.
33 Operating and Store Temperature Range TJ,Tstg -65 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
5 50 Units V V A A W W/ C C Units C/W C/W 2004.
October 6 - 134 http://www.
cetsemi.
com CEDF630/CEUF630 Electrical Characteristics Tc = 25 C unless otherwise noted Para...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)