DatasheetsPDF.com

CEDF640

Chino-Excel Technology
Part Number CEDF640
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 23, 2005
Detailed Description CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Sup...
Datasheet PDF File CEDF640 PDF File

CEDF640
CEDF640

Overview
CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.
15 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 15 60 83 0.
66 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
8 50 Units C/W C/W 2009.
Dec http://www.
cetsemi.
com 1 CEDF640/CEUF640 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Char...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)